Numerical prediction on the photovoltaic performance of CZTS?based thin film solar cell
نویسندگان
چکیده
This article presents an enormously effective Cu2ZnSnS4 (CZTS)-based n-ZnS/p-CZTS/p+-WSe2 thin film solar cell. The device has been studied by varying the thickness, doping concentration and defect density of each layer utilizing SCAPS-1D simulation software. power conversion efficiency (PCE) for n-ZnS/p-CZTS single heterojunction is 14.06% with JSC = 20.26 mA cm?2, VOC 0.88 V FF 78.59%, respectively. PCE elevated to 27.31% 33.72 0.97 83.75%, respectively due insertion WSe2 back surface field (BSF) in same structure. significant improvement mainly depends on short circuit current which resulted that absorbs sub-band gap photons through tail-states-assisted (TSA) photon upconversion method. These entire results demonstrate potential as BSF CZTS-based cells.
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ژورنال
عنوان ژورنال: Nano select
سال: 2022
ISSN: ['2688-4011']
DOI: https://doi.org/10.1002/nano.202200228